Ultra-Flat Thermal SiO2 Substrates Select:ø6" Max EL = 260 nm

Max EL = 260 nm

Each chip contains three cantilevers of different force constants

Cantilever Material: Solid Platinum Cantilever Geometry: Rectangular Cantilevers Number: 1

GSB50 Grid Storage Box for 50 Grids

formaldehyde and alcohols

Ultra-Flat Thermal SiO2 Substrates Select:ø6" Max EL = 260 nmDESCRIPTION 21620 6 21620 55 21620 57 21620 510 200nm Thermal Oxide on 6" Ultra Flat Wafer, Type <100>, in 6" wafer carrier 200nm Thermal Oxide on 5x5mm diced Ultra Flat Wafer, Type <100>, in Gel Pak box 200nm Thermal Oxide on 5x7mm diced Ultra Flat Wafer, Type <100>, in Gel Pak box 200nm Thermal Oxide on 10x10mm diced Ultra Flat Wafer, Type <100>, in Gel Pak box each box 25 box 18 box 6 The Ultra Flat SiO2 substrates consist of a 200nm thermally